Photoelectrode/Electrolyte interfacial band lineup engineering with alloyed III-V thin films grown on Si substrate. - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Materials Chemistry C Année : 2024

Photoelectrode/Electrolyte interfacial band lineup engineering with alloyed III-V thin films grown on Si substrate.

Gabriel Loget
Bruno Fabre

Résumé

In this work, we demonstrate how the classical concept of band gap engineering usually used in III–V semiconductor devices can be extended to the engineering of the band lineup between semiconducting photoelectrodes and electrolytes. The performances of photoelectrodes made of GaP1−xAsx epilayers in the full compositional range and grown on low-cost Si substrates were studied and compared with those of photoelectrodes grown on GaAs and GaP substrates. We first show that the changes of incident photon to current conversion efficiency (IPCE) with the As content in GaP1−xAsx alloys are related to the band gap nature (direct or indirect) and band gap energy variations. Then, from flat band potential measurements during Mott–Schottky experiments, valence and conduction band energies of GaP1−xAsx alloys are positioned versus the reversible hydrogen potential. A weak change of conduction band energies and a large evolution of valence band energies are obtained, in good agreement with expected theoretical trends. Such results show that both band gaps and semiconductor/electrolyte band lineups can be engineered through alloying of III–V semiconductors deposited on silicon substrates. This band lineup engineering strategy is expected to be of great interest to address specific redox reactions in the electrolyte, provided that suitable protecting or passivating layers can be used to limit surface/interface recombinations.

Domaines

Matériaux Autre
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Année Mois Jours
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jeudi 6 juin 2024
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Année Mois Jours
Avant la publication
jeudi 6 juin 2024
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jeudi 6 juin 2024
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Dates et versions

hal-04383334 , version 1 (15-04-2024)

Identifiants

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Mekan Piriyev, Gabriel Loget, Yoan Léger, Vi Hanh Le, Lipin Chen, et al.. Photoelectrode/Electrolyte interfacial band lineup engineering with alloyed III-V thin films grown on Si substrate.. Journal of Materials Chemistry C, 2024, 12 (3), pp.1091-1097. ⟨10.1039/d3tc02556j⟩. ⟨hal-04383334⟩
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