Domain walls unmasked during domain duplication in ferromagnetic tunnel junctions
Résumé
This paper highlights the role played by domain walls during domain duplication in ferromagnetic junctions. The evolution of the resistance jumps with reversal field when duplication occurs cannot be exclusively explained by parallel tunnel paths of electrons through regions with parallel and antiparallel magnetization alignment. A model of tunnel resistance taking into account the contribution of domain walls was used to extract their density. The extracted values are in agreement with experimental data.
Domaines
Matière Condensée [cond-mat]
Fichier principal
Domain walls unmasked during domain duplication in ferromagnetic tunnel junctions-PhysRevB.69.064430.pdf (166.95 Ko)
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