Fe ∕ Mg O interface engineering for high-output-voltage device applications
Résumé
The magnetotransport characteristics of Fe∕MgO∕Fe epitaxial tunnel junctions are reported. For clean Fe∕MgO interfaces, a tunnel magnetoresistance of 150% is measured. However, the magnetoresistance decreases rapidly with the applied voltage. Consequently, the main parameter to optimize for device application, namely the output voltage, remains relatively low. This limitation has been solved by interface engineering through the insertion of carbon impurities at the Fe∕MgO interface. Although the tunnel magnetoresistance amplitude is slightly reduced, its variation versus the applied voltage becomes strongly asymmetric with large magnetoresistance maintained up to 1.5V. This determines a large increase of the tunnel junction output voltage.
Fichier principal
FeMgO interface engineering for high output voltage device applications-062512_1_online (1).pdf (816.98 Ko)
Télécharger le fichier
Origine | Fichiers éditeurs autorisés sur une archive ouverte |
---|