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Article Dans Une Revue Applied Physics Letters Année : 2006

Fe ∕ Mg O interface engineering for high-output-voltage device applications

C. Tiusan
M. Sicot
  • Fonction : Auteur
Michel Hehn
C. Belouard
  • Fonction : Auteur
S. Andrieu
  • Fonction : Auteur
F. Montaigne
  • Fonction : Auteur
A. Schuhl
  • Fonction : Auteur

Résumé

The magnetotransport characteristics of Fe∕MgO∕Fe epitaxial tunnel junctions are reported. For clean Fe∕MgO interfaces, a tunnel magnetoresistance of 150% is measured. However, the magnetoresistance decreases rapidly with the applied voltage. Consequently, the main parameter to optimize for device application, namely the output voltage, remains relatively low. This limitation has been solved by interface engineering through the insertion of carbon impurities at the Fe∕MgO interface. Although the tunnel magnetoresistance amplitude is slightly reduced, its variation versus the applied voltage becomes strongly asymmetric with large magnetoresistance maintained up to 1.5V. This determines a large increase of the tunnel junction output voltage.
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Dates et versions

hal-04370098 , version 1 (02-01-2024)

Identifiants

Citer

C. Tiusan, M. Sicot, Michel Hehn, C. Belouard, S. Andrieu, et al.. Fe ∕ Mg O interface engineering for high-output-voltage device applications. Applied Physics Letters, 2006, 88 (6), ⟨10.1063/1.2172717⟩. ⟨hal-04370098⟩
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