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Article Dans Une Revue Journal of Computational Electronics Année : 2023

Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT

Résumé

The modeling of self-heating in GaN-based devices is presented in this paper. A setup for DC I–V and short pulse I–V was used to characterize the device. This paper used four different methods to estimate self-heating, thermal resistance, and channel temperature in a GaN-based high electron mobility transistor (HEMT) fabricated on a SiC substrate. The procedures are basic and straightforward, making them suitable for determining self-heating. We concentrated on reducing the number of measurements needed to determine self-heating and/or channel temperature for any applied ambient temperatures. In addition, a summary of channel temperature for different GaN HEMTs found in—literatures is also presented. Finally, all of the findings are compared using a fair difference threshold. This work reflects an essential and comprehensive understanding of device technology.
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Dates et versions

hal-04369026 , version 1 (02-01-2024)

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Fahmida Sharmin Jui, Sabrina Alam, Anwar Jarndal, Christophe Gaquiere, Mohammad Alim. Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT. Journal of Computational Electronics, 2023, ⟨10.1007/s10825-023-02121-w⟩. ⟨hal-04369026⟩
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