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Article Dans Une Revue Materials Science in Semiconductor Processing Année : 2024

InGaN based Schottky barrier solar cell: Study of the temperature dependence of electrical characteristics

Résumé

The indium gallium nitride (InGaN) semiconductor alloy shows great promise for high-efficiency thin-film solar cells due to its intrinsic characteristics. However, there are major challenges in the development of high-quality p-doped and indium-rich InGaN layers to fabricate a pn or pin solar cell. This study focuses on the development of an alternative structure, not requiring p-doping, with a Schottky contact on n-type InGaN. The InGaN absorber was grown by metalorganic chemical vapor deposition and its structural, morphological and optical properties studied. Structural analysis by X-ray diffraction showed the growth of single crystal layers without phase separation. Indium compositions which vary up to around 8.3 % were confirmed by transmission measurements. The formation of V-shaped pits was observed with increased indium composition at lower growth temperatures. Schottky diodes based on InGaN with platinum metallic contacts were fabricated and their current–voltage characteristics studied in detail as a function of temperature. This analysis of the conduction mechanisms in Schottky/InGaN devices permitted in particular the extraction of the diode parameters as a function of the temperature showing a high rectification with an ideality factor of 1.15 with reverse saturation current of 6.7E−9 A at room temperature for an indium composition of 5.52 %. In addition, the analysis revealed the presence of a dual Gaussian distribution of barrier heights in a specific temperature range. Finally, the incident photon-to-electron conversion efficiency (IPCE) of the fabricated InGaN Schottky solar cells, measured using intensity-modulated photocurrent spectroscopy, reached a peak value of 51 %, which is among the highest published values for InGaN based solar cells.
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Dates et versions

hal-04362728 , version 1 (23-12-2023)

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Ahmad Sauffi Yusof, Sidi Ould Saad Hamady, Zainuriah Hassan, Mohd Anas Ahmad, Sha Shiong Ng, et al.. InGaN based Schottky barrier solar cell: Study of the temperature dependence of electrical characteristics. Materials Science in Semiconductor Processing, 2024, 172, pp.108082. ⟨10.1016/j.mssp.2023.108082⟩. ⟨hal-04362728⟩
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