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Article Dans Une Revue (Data Paper) Physical Chemistry Chemical Physics Année : 2019

Unoccupied electronic band structure of pentagonal Si nanoribbons on Ag(110)

Nils Fabian Kleimeier
Gabi Wenzel
Adrian Joe Urban
  • Fonction : Auteur
Mohamed Rachid Tchalala
  • Fonction : Auteur
Yuriy Dedkov
Elena Voloshina
Helmut Zacharias
  • Fonction : Auteur

Résumé

Silicon nanoribbons-one dimensional silicon structures with a pentagonal atomic structure and mixed sp2- and sp3-hybridisation-grow on Ag(110) upon deposition of silicon. These nanostructures are viewed as promising candidates for modern day electronics as they are comprised of the same element as today's semiconductor devices. Even though they have been studied extensively over the last decade, only little is known about their unoccupied band structure which is important for possible future optoelectronics, semiconductor, and spintronics applications. In order to elucidate the unoccupied band structure of the nanoribbons, k-resolved inverse photoemission spectroscopy (KRIPES) studies were performed on both nanoribbon structures reported in the literature as well as on the bare Ag(110) substrate within the energy range of E - EF = 0-6.5 eV. The obtained experimental results are compared to density functional theory (DFT) calculated band structures to assign individual spectral features to specific bands. Since even small changes in the structural model of the nanoribbons lead to a change in the calculated band structure, this comparison allows us to assess the validity of the proposed structural models.
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Dates et versions

hal-04361511 , version 1 (22-12-2023)

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Citer

Nils Fabian Kleimeier, Gabi Wenzel, Adrian Joe Urban, Mohamed Rachid Tchalala, Hamid Oughaddou, et al.. Unoccupied electronic band structure of pentagonal Si nanoribbons on Ag(110). Physical Chemistry Chemical Physics, 2019, 21 (32), pp.17811-17820. ⟨10.1039/c9cp02239b⟩. ⟨hal-04361511⟩
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