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Communication Dans Un Congrès Année : 2023

Additive Processed ZnO Transparent Vertical Field Effect Transistor

Résumé

Transparent vertical field effect transistor is fabricated by additive process, using only spin-coating to deposit successive layers. The main purpose is to integrate driving transistor and OLED, minimizing the area of the pixel of a transparent display using the lowest cost process. After optimizing each constitutive layer, HfO 2 layer as gate insulator, AuNWs network as non-continuous source and ZnO as semiconducting layer, full vertical ITO / HfO 2 / AuNWs / ZnO / AgNWs transistor is fabricated and characterized. The drain current is modulated by the gate voltage by more than 4 orders. The transparency of the full device is 85%.
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Dates et versions

hal-04356710 , version 1 (20-12-2023)

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Citer

Sajid Hussain, Fawad Saeed, Lei Wei, Tayeb Mohammed-Brahim. Additive Processed ZnO Transparent Vertical Field Effect Transistor. 2023 37th Symposium on Microelectronics Technology and Devices (SBMicro), Aug 2023, Rio de Janeiro, Brazil. ⟨10.1109/sbmicro60499.2023.10302488⟩. ⟨hal-04356710⟩
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