Communication Dans Un Congrès Année : 2011

Structural and Optical Properties of GaN Quantum Dots

B. Daudin
  • Fonction : Auteur
N. Gogneau
  • Fonction : Auteur
C. Adelmann
  • Fonction : Auteur
E. Sarigiannidou
T. Andreev
  • Fonction : Auteur
F. Enjalbert
  • Fonction : Auteur
E. Monroy
  • Fonction : Auteur
F. Fossard
J. Rouvière
Y. Hori
  • Fonction : Auteur
D. Jalabert
  • Fonction : Auteur
Le Si Dang
  • Fonction : Auteur
M. Tanaka
  • Fonction : Auteur
O. Oda
  • Fonction : Auteur

Résumé

ABSTRACT Growth conditions, structural and optical properties of GaN quantum dots (QDs) grown by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio value and on growth temperature, the growth mode of GaN deposited on AlN can be either of the Stranski-Krastanow or of the Frank-Van der Merwe type. It will be shown that vertical correlation results in a red shift and in a narrowing of the photoluminescence spectra. Growth of Eu-doped GaN quantum dots embedded in AlN will be described. Intense photoluminescence associated with Eu has been measured, with no GaN band-edge emission, as an evidence that carrier recombination mostly occurs through rare earth ion excitation. Persistent photoluminescence of Eu-doped GaN quantum dots as a function of temperature has been put in evidence, as a further confirmation of the recombination of confined carriers through Eu ion excitation.

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Dates et versions

hal-04341756 , version 1 (13-12-2023)

Identifiants

Citer

B. Daudin, N. Gogneau, C. Adelmann, E. Sarigiannidou, T. Andreev, et al.. Structural and Optical Properties of GaN Quantum Dots. GaN and Related Alloys, Dec 2003, Boston (USA), United States. pp.Y4.7, ⟨10.1557/PROC-798-Y4.7⟩. ⟨hal-04341756⟩
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