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Communication Dans Un Congrès Année : 2023

Locally controlling quantum yields in 2D semiconductors via electron tunneling

Rémi Bretel
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Elizabeth Boer-Duchemin
Gérald Dujardin
Borissov Andrei Andrey
Eric Le Moal

Résumé

Abstract: Using a scanning tunneling microscope, the radiative recombination yield of excitons in a laser-excited two-dimensional semiconductor is locally and electrically controlled. Monolayer transition-metal dichalcogenides (TMDs)1,2 are direct-bandgap two-dimensional (2D) semiconductors that have potentially groundbreaking applications in nanodevice technologies thanks to their unique optical and electronic properties. Even at room temperature, the photophysics of monolayer TMDs is governed by the exciton dynamics, i.e., the dynamics of bound electron-hole pairs that can diffuse in the 2D lattice and interact with each other or with charge carriers. Manipulating the elementary excitonic processes (i.e., exciton creation, diffusion and recombination) is key for the performance of TMD-based devices. In particular, the control of the luminescence quantum yield is a long sought-after goal in 2D optoelectronics and nanophotonics.3 Attempts to control trion formation in monolayer TMDs on the nanoscale have been reported, e.g., using the plasmonic tip-substrate nanocavity of an atomic force microscope.4 Nevertheless, distinguishing charge injection and electromagnetic effects in such plasmon-based experiments is challenging. Moreover, most of the techniques to locally control or excite excitons in 2D materials that are based on a scanning probe (or a focused electron beam) provide virtually no direct information about the diffusion and local recombination processes of these excitons,5,6 a key aspect for the integration of these materials in realistic devices. In this communication, we introduce a new method to locally and electrically control the radiative quantum yield of monolayer TMDs on transparent electrodes (i.e., indium tin oxide-coated glass) using the tip and the tunneling current of a scanning tunneling microscope (STM).7 Via a combination of STM and wide-field photoluminescence microscopy, we uncover the effects of the biased tip-sample junction on the excitonic properties a WS2 monolayer. The radiative quantum yield is modified in two ways, both of which are shown to be reversible. First, the near-field electromagnetic non-radiative transfer of energy from excitons to the non-plasmonic tungsten tip of the STM quenches the photoluminescence in an almost diffraction-limited area just below the tip. Secondly, bias and current-dependent photoluminescence quenching and enhancement occur within micrometer-scale areas around the tip position. We ascribe such “long-range” effects to lateral spatial gradients in the charge carrier density in the monolayer, which presumably modify the relative contributions of neutral and charged excitons to the photoluminescence and the radiative quantum yield of the excitons. Such doping gradients result from electron tunneling between the tip and the semiconductor and a partial electronic decoupling of the monolayer from the underlying conducting substrate.7 This work was supported by public grants from the French National Research Agency (H2DH ANR-15-CE24-0016, Intelplan ANR-15-CE24-0020, M-Exc-ICO ANR-16-CE24-0003, and ATOEMS ANR-20-CE24-0010) and overseen by the ANR as part of the “Investissements d’Avenir” program (Labex NIE ANR-11-LABX-0058-NIE and Labex NanoSaclay ANR-10-LABX-0035). This project has received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (grant agreement no. 771850). This work has received financial support from the Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP), through projects 18/08543-7, 20/12480-0, and 14/23399-9. References 1.Mak, K. F. and J. Shan, “Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides,” Nat. Photonics, Vol. 10, 216, 2016. 2.Wang, G., A. Chernikov, M. M. Glazov, T. F. Heinz, X. Marie, T. Amand, and B. Urbaszek, “Colloquium: Excitons in atomically thin transition metal dichalcogenides,” Rev. Mod. Phys., Vol. 90, 021001, 2018. 3.Lien, D.-H., S. Z. Uddin, M. Yeh, M. Amani, H. Kim, J. W. Ager, E. Yablonovitch, and A. Javey, “Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors,” Science, Vol. 364, 468−471, 2019. 4.He, Z., Z. Han, J. Yuan, A. M. Sinyukov, H. Eleuch, C. Niu, Z. Zhang, J. Lou, J. Hu, D. V. Voronine, and M. O. Scully, “Quantum plasmonic control of trions in a picocavity with monolayer WS2,” Sci. Adv., Vol. 5, eaau8763, 2019. 5.Park, K.-D., O. Khatib, V. Kravtsov, G. Clark, X. Xu, and M. B. Raschke, “Hybrid Tip-Enhanced Nanospectroscopy and Nanoimaging of Monolayer WSe2 with Local Strain Control,” Nano Lett., Vol. 16, 2621−2627, 2016. 6.Bonnet, N., H. Y. Lee, F. Shao, S. Y. Woo, J.-D. Blazit, K. Watanabe, T. Taniguchi, A. Zobelli, O. Stéphan, M. Kociak, S. Gradečak, and L. H. G. Tizei, “Nanoscale Modification of WS2 Trion Emission by Its Local Electromagnetic Environment,” Nano Lett., Vol. 21, 10178−10185, 2021. 7.Peña Román, R. J., R. Bretel, D. Pommier, L. E. Parra López, E. Lorchat, E. Boer-Duchemin, G. Dujardin, A. G. Borisov, L. F. Zagonel, G. Schull, S. Berciaud, and E. Le Moal, “Tip-induced and electrical control of the photoluminescence yield of monolayer WS2,” Nano Lett., Vol. 22, No. 23, 9244–9251, 2022.

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hal-04329949 , version 1 (07-12-2023)

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  • HAL Id : hal-04329949 , version 1

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Ricardo Javier Peña Román, Rémi Bretel, Delphine Pommier, Luis Enrique Parra Lopez, Étienne Lorchat, et al.. Locally controlling quantum yields in 2D semiconductors via electron tunneling. 13th International Conference on Metamaterials, Photonic Crystals and Plasmonics, META2023, Jul 2023, Paris, France. ⟨hal-04329949⟩
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