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Communication Dans Un Congrès Année : 2023

Locally controlling the radiative yield of a 2D semiconductor using the tip of an STM

Rémi Bretel
  • Fonction : Auteur
  • PersonId : 1222425
  • IdRef : 261402803
Delphine Pommier
  • Fonction : Auteur
  • PersonId : 1153249
  • IdRef : 258367253
Elizabeth Boer-Duchemin
Gérald Dujardin
Borissov Andrei Andrey
Eric Le Moal

Résumé

Using a scanning tunneling microscope, the radiative recombination yield of excitons in a laser-excited two-dimensional semiconductor is locally and electrically controlled. The local electrical control of the radiative efficiency of a two-dimensional (2D) semiconductor is a long-sought objective in optoelectronics, for the development of future nanodevice technology. Previous attempts at such a control have come up against the difficulty of controlling the local injection of charge carriers into the semiconductor and simultaneously visualizing in real space how their diffusion and their interactions with excitons modify the emission properties of the semiconductor [1,2]. We solved this problem by combining scanning tunneling microscopy (STM) and wide-field laser-induced photoluminescence microscopy [3]. The tunneling current under the tip of the STM serves to locally inject charge carriers (electrons or holes) into the semiconductor, which creates charge carrier density gradients around the tip, on the micrometer scale. The effect of these gradients on the emission properties (quantum yield and spectral distribution) is resolved spatially by recording a wide-field image of the photoluminescence using the optical microscope. With this new experimental approach, we demonstrated the manipulation of the excitonic photoluminescence yield in a monolayer of tungsten disulfide (WS2). Our results indicate that such a manipulation is possible because the ratio of neutral versus charged excitons (trions) formed depends on the charge carrier density in the semiconductor [3]. [1]He, Z.; Han, Z.; Yuan, J.; Sinyukov, A. M.; Eleuch, H.; Niu, C.; Zhang, Z.; Lou, J.; Hu, J.; Voronine, D. V.; Scully, M. O. Science Advances 2019, 5, eaau8763 [2]Bonnet, N.; Lee, H. Y.; Shao, F.; Woo, S. Y.; Blazit, J.-D.; Watanabe, K.; Taniguchi, T.; Zobelli, A.; Stéphan, O.; Kociak, M.; Gradečak, S.; Tizei, L. H. G. Nano Letters 2021, 21, 10178 [3] Peña Román, R. J. ; Bretel, R. ; Pommier, D. ; Parra López, L. E. ; Lorchat, E. ; Boer-Duchemin, E. ; Dujardin, G. ; Borisov, A. G. ; Zagonel, L. F. ; Schull, G. ; Berciaud, S. ; Le Moal, E. Nano Letters 2022, 22, 9244

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Dates et versions

hal-04329942 , version 1 (07-12-2023)

Identifiants

  • HAL Id : hal-04329942 , version 1

Citer

Ricardo Javier Peña Román, Rémi Bretel, Delphine Pommier, Luis Enrique Parra Lopez, Étienne Lorchat, et al.. Locally controlling the radiative yield of a 2D semiconductor using the tip of an STM. Nanophotonics of 2D Materials, N2D 2023, Jun 2023, San Sebastian, Spain. ⟨hal-04329942⟩
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