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Article Dans Une Revue Journal of Vacuum Science & Technology A Année : 1999

Oxynitridation of cubic silicon carbide (100) surfaces

Résumé

The interaction of nitric oxide (NO) on Si-rich β-SiC(100) 3×2 surface reconstruction is investigated by photoemission spectroscopy using Al Kα (1486.6 eV) and Zr Mζ (151.4 eV) x-ray lines at Si 2p, C 1s, N 1s and O 1s core levels. NO exposures are performed at sample temperatures ranging from 25 to 1000 °C. The initial sticking coefficient of the NO molecules is found to be already significant at room temperature, with a dissociative adsorption resulting in Si oxynitride products as SiOxNy. The amount of oxynitride is significantly increased at surface temperatures of 500 °C and above. In addition, temperature is found to favor the formation nitrogen-rich SiOxNy oxynitride products. Thermal oxynitridation on the 3×2 reconstruction results in a SiOxNy/β-SiC(100) interface.
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Dates et versions

hal-04329862 , version 1 (07-12-2023)

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F. Amy, L. Douillard, V. Yu. Aristov, P. Soukiassian. Oxynitridation of cubic silicon carbide (100) surfaces. Journal of Vacuum Science & Technology A, 1999, 17 (5), pp.2629-2633. ⟨10.1116/1.581922⟩. ⟨hal-04329862⟩
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