Direct Observation of a β -SiC(100)- c ( 4 × 2 ) Surface Reconstruction - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review Letters Année : 1997

Direct Observation of a β -SiC(100)- c ( 4 × 2 ) Surface Reconstruction

Résumé

We provide the first direct observation of a b-SiCs100d-cs4 3 2d surface reconstruction. The experiments are performed using high-resolution scanning tunneling microscopy (STM). Flat surfaces having a long range order are grown. Individual Si dimers are identified and form a centered pseudohexagonal pattern give a cs4 3 2d array. Further support for Si-dimer identification is provided by theoretical STM image calculations. The results suggest a model of dimer rows having alternatively up and down dimers (AUDD) within the row, in an “undulating” type of arrangement reducing the surface stress. Hence the b-SiCs100d- and Sis100d-cs4 3 2d surface reconstructions are very different.
Fichier non déposé

Dates et versions

hal-04329809 , version 1 (07-12-2023)

Identifiants

Citer

P. Soukiassian, F. Semond, L. Douillard, A. Mayne, G. Dujardin, et al.. Direct Observation of a β -SiC(100)- c ( 4 × 2 ) Surface Reconstruction. Physical Review Letters, 1997, 78 (5), pp.907-910. ⟨10.1103/PhysRevLett.78.907⟩. ⟨hal-04329809⟩
8 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More