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Article Dans Une Revue Chinese Physics B Année : 2023

Direct observation on impurity distribution in phosphorous/boron co-doped Si nanocrystals

Résumé

Abstract Doping in Si nanocrystals is an interesting topic and to directly study the dopants distribution in phosphorous/boron co-doping circumstance is one of the important issue nowadays. In this study, atom probe tomography is performed to study the structures and impurity distribution in phosphorous/boron co-doped Si nanocrystals/SiO2 multilayers. Comparing with phosphorous singly-doped Si nanocrystals, it is interesting to find the phosphorous concentration in co-doped samples can be significantly improved. Theoretical simulation suggests that phosphorous-boron pairs are formed in co-doped Si nanocrystals with the lowest formation energy, which also reduce the formation energy of phosphorous in Si nanocrystals. The results indicate co-doping can promote more phosphorous impurities enter into the near-surface and inner sites of Si nanocrystals, which provides an interesting way to regulate the electronic and optical properties of Si nanocrystals like the observed enhancement of conductivity and sub-band light emission.
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Dates et versions

hal-04326868 , version 1 (06-12-2023)

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Dongke Li, Junnan Han, Teng Sun, Jiaming Chen, Etienne Talbot, et al.. Direct observation on impurity distribution in phosphorous/boron co-doped Si nanocrystals. Chinese Physics B, 2023, 32, pp.126102. ⟨10.1088/1674-1056/acd7cf⟩. ⟨hal-04326868⟩
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