Over 70-GHz 4.9-V ppdiff InP linear driver for next generation coherent optical communications
Résumé
This paper presents a 86.8-GHz bandwidth 4.9-V ppdiff (peak-to-peak differential) linear electro-optical (E/O) modulator driver fabricated in III-V Lab's 0.7-μm InP DHBT technology. On-wafer measurements exhibit a differential gain of 15.1 dB at 0.2 GHz and a 4.1-dB peaking gain at 51 GHz. Record bandwidth and maximum peaking-frequency, for a lumped linear driver, are obtained. Very high quality 100-Gb/s NRZ and 50GBd PAM-4 output eye diagrams have been measured. A good measurement and EM-simulation agreement is shown. The InP linear driver power consumption is respectively 0.94 and 1.2 W at 4.1 and 4.9-V ppdiff output swings.
Mots clés
E/O modulator high-speed linear driver
4-level pulse amplitude modulation (PAM-4)
Indium phosphide double heterojunction transistor
over 56-GBd electrical time-domain modulation
driver circuits
heterojunction bipolar transistors
III-V semiconductors
indium compounds
lumped parameter networks
next generation networks
optical communication equipment
optical modulation
pulse amplitude modulation