0.7-$\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BV CE0 for High Speed and High Frequency Integrated Circuits - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Journal of the Electron Devices Society Année : 2019

0.7-$\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BV CE0 for High Speed and High Frequency Integrated Circuits

M. Riet
  • Fonction : Auteur
Romain Hersent
F. Jorge
A. Konczykowska
J.-Y. Dupuy

Résumé

We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both f T and f MAX of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer. This technology is used for the fabrication of a very high speed 2:1 multiplexing selector operating up to 212-Gb/s, establishing a speed record. A 5.4-Vpp 100-Gb/s distributed differential selector-driver, as well as a 4.3-Vpp 64-GBd 8-pulse-amplitude-modulation (PAM) (192 Gb/s) high-speed power digital-to-analog converter (DAC) were also realized in this technology.

Dates et versions

hal-04315920 , version 1 (30-11-2023)

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Citer

V. Nodjiadjim, M. Riet, C. Mismer, Romain Hersent, F. Jorge, et al.. 0.7-$\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BV CE0 for High Speed and High Frequency Integrated Circuits. IEEE Journal of the Electron Devices Society, 2019, 7, pp.748-752. ⟨10.1109/JEDS.2019.2928271⟩. ⟨hal-04315920⟩

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