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Communication Dans Un Congrès Année : 2023

How ALD deposition analysis can help PVD deposition process!

Bertrand Vilquin
Damien Deleruyelle
Jordan Bouaziz
Martine Le Berre
Nicolas Baboux

Résumé

HfO2 is known to exist in three different crystal phases at normal pressure: monoclinic phase at 300K, a tetragonal phase above 2050K, and finally a cubic phase above 2803K. The stable region of the tetragonal phase extends to lower temperatures in nanoscale crystallites due to the surface energy effect. As a consequence, the crystallization in thin films tends to proceed by nucleation in a tetragonal phase and a martensitic transformation to the monoclinic phase during crystal growth. This phase transformation involves volume expansion and shearing of the unit cell. The admixture of sufficient SiO2 (between 5 and 10 mol.%) has been found to stabilize the tetragonal phase in HfO2 but in 2011, it was also reported the presence of ferroelectric and antiferroelectric crystalline phases in SiO2-doped HfO2 thin films grown by atomic layer deposition [1]. Based on X-ray diffraction measurements, it was argued that the ferroelectric phase is orthorhombic with a Pca21 space group. The occurrence of ferroelectricity in Si:HfO2 is remarkable as it represents one of very few metal oxides which are thermodynamically stable on silicon, leading to enable a number of device concepts relying on silicon/ferroelectric heterostructures. Various applications have been suggested for fluorite-structure ferroelectrics due to their advantages over the conventional perovskite-structure ferroelectrics [2]. We focus on (Hf,Zr)O2 (HZO) thin films deposition for the capacitor of Ferroelectric Random Access Memories (FRAM) in the 1Transitor-1Capacitor (1T-1C) model. (Hf,Zr)O2 thin films are studied to either fully understand the stabilization of the ferroelectric phase (f-phase) by atomic layer deposition and RF magnetron sputtering or to fit with industrial requirements [3]. References: [1] T.S. Bockle et al., Appl. Phys. Lett. 99, 102903 (2011). [2] M.H. Park, et al., MRS Commun. 1 (2018). [3] J. Bouaziz et al., ACS Applied Electronic Materials 1 (9), 1740 (2019).
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Dates et versions

hal-04308002 , version 1 (26-11-2023)

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  • HAL Id : hal-04308002 , version 1

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Bertrand Vilquin, Damien Deleruyelle, Jordan Bouaziz, Martine Le Berre, Céline Chevalier, et al.. How ALD deposition analysis can help PVD deposition process!. 9ème Workshop RAFALD, GDR RAFALD, Nov 2023, Lille (France), France. ⟨hal-04308002⟩
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