Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices
Résumé
This work presents an innovative technology where GaN-based vertical and lateral devices are monolithically integrated. Indeed, this technology will enable to drive high-power switching devices (vertical GaN power FinFETs) using lateral GaN HEMTs with minimum losses and high stability. The main challenge of this technology is the electrical isolation between these two devices. In this paper, a new isolation approach is presented to avoid any degradation of the lateral transistor performance. In fact, the high voltage applied at the drain of the vertical GaN power FinFET can drastically affect the drain current of the lateral GaN HEMT. To overcome this problem, a highly doped n + GaN layer is inserted between the epi-layers of these two devices. TCAD-Sentaurus simulator is used to validate this new approach. Indeed, this highly n-doped GaN layer is blocking the vertical high electrical field and preventing any depletion of the 2D gas of the lateral GaN HEMT. To the best of our knowledge, it is the first time where the vertical and lateral GaN devices are integrated within the same technology.
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