Surface engineering for SiC etching with Ni electroplating masks - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Surface engineering for SiC etching with Ni electroplating masks

Résumé

This study reports research on Nickel etch mask used for deep plasma etching of silicon carbide (SiC) substrates, aiming to fabricate power integrated devices. Ni masks with significant thicknesses are requested when performing deep etches of SiC, which are less compatible with classic thin film physical vapor deposition (PVD) methods. Uniform and smooth plasma etched surfaces of SiC were obtained without micromasking phenomena upon using Ni masks deposed by electroplating. Detailed here is this Ni masks based technology we developed beyond its limitation, in order to obtain a high-etched thickness of silicon carbide substrates.
Fichier principal
Vignette du fichier
sic papper_ml_nb_v 6.pdf (972.09 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04303085 , version 1 (23-11-2023)

Identifiants

Citer

Nour Beydoun, Mihai Lazar, Xavier Gassmann. Surface engineering for SiC etching with Ni electroplating masks. 2022 International Semiconductor Conference (CAS), Oct 2022, Poiana Brasov, Romania. pp.119-122, ⟨10.1109/CAS56377.2022.9934701⟩. ⟨hal-04303085⟩
10 Consultations
6 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More