1.65 μm L/S high density interconnect on organic substrate by advanced semi-additive process for HPC applications - Archive ouverte HAL
Communication Dans Un Congrès Année : 2023
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hal-04301214 , version 1 (22-11-2023)

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  • HAL Id : hal-04301214 , version 1

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H Hamieh, E Paradis, Y Beilliard, S Ecoffey, I de Sousa, et al.. 1.65 μm L/S high density interconnect on organic substrate by advanced semi-additive process for HPC applications. IEEE 73rd Electronic Components and Technology Conference, 2023, Orlando (FL), United States. ⟨hal-04301214⟩
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