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Journal Articles ACS Nano Year : 2023

Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits

Ankita Ram
  • Function : Author
Krishna Maity
  • Function : Author
Cédric Marchand
  • Function : Author
Aymen Mahmoudi
  • Function : Author
Aseem Rajan Kshirsagar
Mohamed Soliman
  • Function : Author
Takashi Taniguchi
  • Function : Author
Kenji Watanabe
  • Function : Author
Bernard Doudin
  • Function : Author
Abdelkarim Ouerghi
  • Function : Author
Sven Reichardt
  • Function : Author
Ian O’connor
  • Function : Author


Emerging reconfigurable devices are fast gaining in popularity in the search for next-generation computing hardware, while ferroelectric engineering of the doping state in semiconductor materials has the potential to offer alternatives to the traditional von-Neumann architecture. In this work, we combine these concepts and demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect-Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe 2) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP 2 S 6) layer. Controlling the state encoded in the Program Gate enables switching between p, n and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 10 6 and hysteresis windows of up to 10 V width. The homojunction can change from ohmic-like to diode behavior, with a large rectification ratio of 10 4. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with long retention time exceeding 10^4 seconds. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key non-volatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates remarkable compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit groundbreaking potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness.
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Dates and versions

hal-04300296 , version 1 (22-11-2023)



Ankita Ram, Krishna Maity, Cédric Marchand, Aymen Mahmoudi, Aseem Rajan Kshirsagar, et al.. Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits. ACS Nano, 2023, 17 (21), pp.21865-21877. ⟨10.1021/acsnano.3c07952⟩. ⟨hal-04300296⟩
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