Enhancement of Single‐Photon Purity and Coherence of III‐Nitride Quantum Dot with Polarization‐Controlled Quasi‐Resonant Excitation
Résumé
systems including trapped atoms, [7] point defects, [8-11] and colloidal quantum dots (QDs), [12,13] have been studied to develop ideal quantum light source. However, epitaxially grown semiconductor QDs have received considerable attention because of their fast radiative recombination rate, [14] robustness, and scalability of on-chip integration with photonic [15-17] and electronic devices. [18-20] Epitaxially grown QDs based on III-nitride material systems are among the most promising quantum emitters because of their deterministically polarized emission property [21] as well as their potential for high-temperature operation [22,23] due to their large exciton binding energy. Despite these advantages, two challenges
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