Nanoscale Thermal Transport in Vertical Gateall-around Junction-less Nanowire Transistors-Part II: Multiphysics Simulation
Résumé
Today, extensive research has focused on heat propagation in emerging nanoelectronic devices. With advances in fabrication of nanowire transistors, thermal management has become a critical issue in cooling strategies and conducting materials. In this paper, we present a novel multiphysics analysis of the nanoscale thermal transport in 18 nm vertical junctionless gate-allaround silicon nanowire transistors. Based on this multiphysics analysis, we developed a new computational model derived from the Guyer-Krumhansl equation for describing heat transport within the nanoscale device. Our simulations results agree well with available theoretical approaches as well as measurement data.
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