455/610-GHz fT/fMAX InP DHBT technology with demonstration of a beyond-110-GHz-bandwidth large-swing PAM-4 2:1 AMUX-driver

We report on an Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology for integrated circuit design and fabrication. The 0.4×5 µm² DHBT devices exhibit a 455-GHz fT and a 610-GHz fMAX, with a 4 V common-emitter breakdown voltage, the BVCE0, and a peak current gain β of 25. This enabled state-of-the-art 2:1 Analog multiplexer (AMUX)-driver results with beyond-110-GHz bandwidth and 2-Vppd PAM-4 swing at 100 GBd.

Mots clés

Double heterojunction bipolar transistor Indium Phosphide Analog multiplexer (AMUX) large-swing linear electro-optical modulator driver 4-level pulse amplitude modulation (PAM-4) high-speed integrated circuit (IC)

Domaines

Sciences de l'ingénieur [physics] Micro et nanotechnologies/Microélectronique Electronique

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Article_CSW2023_vf.pdf (4.7 Mo)

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Chhandak Mukherjee : Connectez-vous pour contacter le contributeur

https://hal.science/hal-04296467

Soumis le : lundi 20 novembre 2023-17:35:46

Dernière modification le : jeudi 30 novembre 2023-15:24:51

Dates et versions

hal-04296467 , version 1 (20-11-2023)

Identifiants

HAL Id : hal-04296467 , version 1

Citer

Nil Davy, Romain Hersent, Virginie Nodjiadjim, Marina Deng, Mukherjee Chhandak, et al.. 455/610-GHz fT/fMAX InP DHBT technology with demonstration of a beyond-110-GHz-bandwidth large-swing PAM-4 2:1 AMUX-driver. Compound Semiconductor Week (CSW), May 2023, Jeju Island (South Korea), South Korea. ⟨hal-04296467⟩

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