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Article Dans Une Revue Chemical Vapor Deposition Année : 2010

Fluidized-Bed MOCVD of Bi2O3 Thin Films from Bismuth Triphenyl under Atmospheric Pressure

Résumé

Bismuth oxide thin films are of great interest due to their significant band gap, high refractive index, and dielectric permittivity, as well as marked photoconductivity and photoluminescence.[1] These properties make Bi2O3 films well suited for many applications such as microelectronics,[2] sensor technology,[3] optical coatings,[4] and ceramic glass manufacturing.[5] In this work, we report the synthesis of Bi2O3 films on alumina particles using fluidized bed (FB) CVD under atmospheric pressure. Bismuth triphenyl (Bi(Ph)3) was used as a metal-organic (MO) CVD precursor.

Domaines

Chimie organique
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Dates et versions

hal-04288939 , version 1 (16-11-2023)

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Nicolas Reuge, Jeannette Dexpert-Ghys, Brigitte Caussat. Fluidized-Bed MOCVD of Bi2O3 Thin Films from Bismuth Triphenyl under Atmospheric Pressure. Chemical Vapor Deposition, 2010, 1 (4-6), pp.123-126. ⟨10.1002/cvde.200904280⟩. ⟨hal-04288939⟩
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