Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronics Reliability Année : 2023

Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers

Résumé

The DC and RF electrical performance and reliability of GaN-based transistors depend on their thermal behavior. Therefore, measuring the self-heating temperature of these devices under real operating conditions with high accuracy is an important and challenging issue. For these reasons, we present a time-resolved thermometry technique to measure transient self-heating temperatures in semiconductor components by combining conventional Raman spectroscopy and CeO2 Raman micro-thermometers. Thus, the experimental GaN volumetric and surface self-heating temperatures measured for biased AlInN/GaN HEMTs in both DC and pulsed regime are reported with a submicrometer spatial resolution and a temperature resolution of about 5 °C. Likewise time-resolved self-heating temperature of drain contact surface has also been studied.
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Dates et versions

hal-04281820 , version 1 (13-11-2023)

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R. Strenaer, Y. Guhel, C. Gaquiere, B. Boudart. Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers. Microelectronics Reliability, 2023, 150, pp.115156. ⟨10.1016/j.microrel.2023.115156⟩. ⟨hal-04281820⟩
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