Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronics Reliability Année : 2023

Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications

Résumé

In this work, the robustness of three different AlN/GaN structures targeting high frequency applications with ultra-thin 3 nm AlN barrier and devices with different gate-to-drain spacing are evaluated. Devices were step-stress tested in off-state, semi-on-state, and on-state conditions. Different failure mechanisms were identified. Devices without AlGaN back-barrier show a fast increase of gate leakage current, leading to a significant degradation of electrical parameters such as the threshold voltage Vth, extrinsic transconductance GM, drain saturation current IDSsat and on-resistance Ron. This study reveals the role of the AlGaN back-barrier in the improvement of the device robustness presenting a good electrical parameters stability. The presence of an AlGaN back-barrier on low carbon- doped buffer leads to better gate leakage current stability, low trapping-related and self-heating mechanisms. The AlGaN back-barrier shows an extension of the operational Safe Operating Area for AlN/GaN technology.
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Dates et versions

hal-04278649 , version 1 (10-11-2023)

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N. Said, Kathia Harrouche, F Medjdoub, N. Labat, Jean-Guy Tartarin, et al.. Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications. Microelectronics Reliability, 2023, 150, pp.115110. ⟨10.1016/j.microrel.2023.115110⟩. ⟨hal-04278649⟩
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