SiC integrated circuits for smart power converter
Résumé
The limits of the current electronic solutions based in silicon, restrict the use in harsh environments especially in high temperature (>300 °C). SiC is a material, which allows exceeding these physical constraints. For this purpose SiC integrated circuits based on lateral MESFET have been developed. First steps of the development of smart integrated driver circuit dedicated to harsh environment are presented. Three functions: amplifier, ring oscillator and comparator have been designed, manufactured and characterized.
Domaines
Energie électrique| Origine | Fichiers produits par l'(les) auteur(s) |
|---|