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Article Dans Une Revue Materials Letters Année : 2023

Thermal desorption study on possible hydrogen sources and diffusion barriers in CMOS technology

Résumé

Hydrogen passivation of silicon dangling bonds is a key requirement in the realization of reliable CMOS devices. The creation of a hydrogen reservoir in the device near the silicon may be a solution supporting constant passivation during the life-cycle of the device. In this work, we used thermal desorption spectroscopy to evaluate the amount of hydrogen stored in undoped silicon glass (USG) deposited using SiH 4 (USG-SiH 4) or tetraethyl orthosilicate (USG-TEOS), and silicon (carbon) nitrides, typical dielectrics used in CMOS technology. The goal of the study is to determine if these materials can be used as hydrogen source or diffusion barrier. Our results suggest that USG-SiH 4 can act as an efficient source of hydrogen, while Si nitrides can act as reliable diffusion barrier.
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hal-04275220 , version 1 (26-01-2024)

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Jacopo Remondina, Alain Portavoce, Maxime Bertoglio, Guillaume Roland, Frédéric Lorut, et al.. Thermal desorption study on possible hydrogen sources and diffusion barriers in CMOS technology. Materials Letters, 2023, 337, ⟨10.1016/j.matlet.2023.133916⟩. ⟨hal-04275220⟩
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