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Article Dans Une Revue Journal of Applied Physics Année : 2023

Measuring low doping level and short carrier lifetime in indium arsenide with a contactless terahertz technique at room temperature

E Centeno

Résumé

Non-destructive, reliable, and accurate measurements of low doping levels carrier lifetimes in small direct-bandgap semiconductors such as indium arsenide (InAs) at room temperature are challenging due to intrinsic limitations conventional experimental techniques. In this article, we introduce a contactless optical-terahertz (THz) pump–probe technique continuous-wave regime measuring the 1015−1016cm−3 range down 8 ns InAs. We show that single-parameter material model can be used retrieve free density from THz transmission InAs layers. Additionally, lifetime photogenerated excess carriers measured by modulating using an amplitude-modulated optical pump.

Dates et versions

hal-04265135 , version 1 (30-10-2023)

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Citer

J. Guise, H. Ratovo, Monique Thual, P. Fehlen, F. Gonzalez-Posada, et al.. Measuring low doping level and short carrier lifetime in indium arsenide with a contactless terahertz technique at room temperature. Journal of Applied Physics, 2023, 134 (16), pp.165701. ⟨10.1063/5.0167272⟩. ⟨hal-04265135⟩
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