On the Fluctuation–Dissipation of the Oxide Trapped Charge in a MOSFET Operated Down to Deep Cryogenic Temperatures - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Fluctuation and Noise Letters Année : 2023

On the Fluctuation–Dissipation of the Oxide Trapped Charge in a MOSFET Operated Down to Deep Cryogenic Temperatures

Résumé

In this paper, an analysis of the oxide trapped charge noise in a MOSFET operated down to deep cryogenic temperatures is proposed. To this end, a revisited derivation of the interface trap conductance [Formula: see text] and oxide trapped charge noise [Formula: see text] at the SiO 2 /Si MOS interface is conducted under very low temperature condition, where Fermi–Dirac statistics applies. A new relation between the oxide trapped charge noise [Formula: see text] and the interface trap conductance [Formula: see text] is established, showing the inadequacy of the Nyquist relation at very low temperature. Finally, a new formula for the oxide trapped charge 1/f noise, going beyond the classical Boltzmann expression, is developed in terms of oxide trap density and effective temperature accounting for degenerate statistics.

Dates et versions

hal-04264285 , version 1 (30-10-2023)

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Citer

G. Ghibaudo. On the Fluctuation–Dissipation of the Oxide Trapped Charge in a MOSFET Operated Down to Deep Cryogenic Temperatures. Fluctuation and Noise Letters, 2023, ⟨10.1142/S0219477523500451⟩. ⟨hal-04264285⟩
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