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Communication Dans Un Congrès Année : 2023

Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant

Marc Cousineau
Nicolas C. Rouger
Frédéric Richardeau

Résumé

In this paper, the 3 rd quadrant behavior of a 1.2 kV SiC MOSFET without additional anti-parallel diode is investigated. More specifically, the effect of the gate-source voltage on the reverse conduction is presented, and shows a strong dependency even for a gate voltage varying below the threshold voltage. The static characterization is compared to three other types of MOSFETs that present a stronger reverse current path due to their architectures. A dynamic characterization is also performed to describe the transition between the body-diode conduction and the channel reverse conduction within the 3 rd quadrant (a.k.a. synchronous rectification). Both static and dynamic behaviors are compared to the device's LTspice TM model and highlights the differences between experiment and simulation in 3 rd quadrant as the gate voltage below the threshold voltage is not taken into account in this model. Insights towards a more precise modeling for this operating region are discussed at the end of the article.
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Dates et versions

hal-04254245 , version 1 (23-10-2023)

Identifiants

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Matthieu Masson, Marc Cousineau, Nicolas C. Rouger, Frédéric Richardeau. Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant. 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Sep 2023, Aalborg, Denmark. pp.1-8, ⟨10.23919/epe23ecceeurope58414.2023.10264635⟩. ⟨hal-04254245⟩
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