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Article Dans Une Revue Microelectronic Engineering Année : 2023

Hybridization of ellipsometry and Xps energy loss: robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films

Résumé

In this study, we compare the robustness of optical constants and optical band gap determination of three different materials: SiGe, N-doped HfO$_2$ and MoO$_x$ , using the combination of two techniques: spectroscopic ellipsometry, and energy loss signal (ELS) of X-ray photoelectron spectroscopy (XPS). The determination of such physical properties is achieved through the hybridization of the two techniques based on multiple Tauc-Lorentz model, applied on the whole energy range of measurement. Such use of hybridized data demonstrates a new robust method to determine the band gap of the studied materials, together with the optical indices (refractive index and extinction coefficient) on a wide energy range (up to 40 eV). This method provides an extension of determination of the relevant physical quantities compared to each technique on their own. Moreover, this algorithm is tested on limit conditions, where the energy ranges of measurement of the two respective techniques presented no overlap. Yet the use of a unique physical model still allows us to calculate the different physical quantities even on the energy range where no measurement is performed, validating the semi-predictive nature of the hybrid technique. Additional measurements under different experimental configurations validate the extended scope of such hybrid technique.
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Dates et versions

hal-04253891 , version 1 (23-10-2023)

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Citer

Théo Levert, Alter Zakhtser, Julien Duval, Chloé Raguenez, Stéphane Verdier, et al.. Hybridization of ellipsometry and Xps energy loss: robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films. Microelectronic Engineering, 2023, 283, pp.112117. ⟨10.2139/ssrn.4554544⟩. ⟨hal-04253891⟩
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