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Article Dans Une Revue Solid-State Electronics Année : 2023

Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices

Résumé

A new method to induce tensile stress in a PDSOI NMOS device for RF applications is proposed, which is based on relaxing a SiGe layer built underneath silicon. By means of TCAD simulations, we demonstrate that stress transfer from SiGe to Si occurs by means of at least two different mechanisms: SiGe relaxation due to amorphization and the formation of Stacking Faults during recrystallization. By considering both phenomena, a tensile stress of 0.5 GPa can be injected into the silicon channel. Moreover, the impact of annealing steps on the detrimental out-of-SiGe Ge diffusion has been simulated by considering an inter-diffusion model, showing the importance of adapting the PDSOI process flow to account for the presence of the new stressor.

Domaines

Electronique
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Dates et versions

hal-04253696 , version 1 (13-11-2023)

Identifiants

Citer

Thomas Bordignon, Blandine Duriez, Nicolas Guitard, Romain Duru, Clément Pribat, et al.. Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices. Solid-State Electronics, 2023, 210, pp.108787. ⟨10.1016/j.sse.2023.108787⟩. ⟨hal-04253696⟩
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