Communication Dans Un Congrès Année : 2023

SiC Power MOSFET Overload Detection, Short-Circuit Protection and Gate-Oxide Integrity Monitoring Using a Switched Resistors Dual-Channel Gate-Driver [ESREF'23]

Frédéric Richardeau
Wadia Jouha
  • Fonction : Auteur
  • PersonId : 1174960
  • IdRef : 233353216
Jean-Marc Blaquière
Sébastien Vinnac
Stéphane Azzopardi
  • Fonction : Auteur
  • PersonId : 1080308
Thanh Long Le
  • Fonction : Auteur
  • PersonId : 1270414

Résumé

The main factor still hindering a wide industrial adoption of SiC power MOSFETs is essentially a global reduced ruggedness in comparison to their Si counterparts. The proposed gate driving architecture leverages faultinduced gate voltage disturbances and enhances them to facilitate their detection through two dedicated commutated gate resistors. This approach combines switching dynamics and enhanced ON-state faul t sensibility. This architecture, affording innovative short-circuits and overload detections, as well as gate-oxide integrity monitoring, was validated on a 600V short-circuit power test bench using commercial 1200V/36A SiC MOSFETs.
Fichier principal
Vignette du fichier
ESREF23_Mathis_Version_auteur-HAL-ESREF.pdf (1.17 Mo) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04252358 , version 1 (20-10-2023)

Identifiants

Citer

Mathis Picot-Digoix, Frédéric Richardeau, Wadia Jouha, Jean-Marc Blaquière, Sébastien Vinnac, et al.. SiC Power MOSFET Overload Detection, Short-Circuit Protection and Gate-Oxide Integrity Monitoring Using a Switched Resistors Dual-Channel Gate-Driver [ESREF'23]. 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115082⟩. ⟨hal-04252358⟩
39 Consultations
73 Téléchargements

Altmetric

Partager

More