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Communication Dans Un Congrès Année : 1989

Analysis of the Punchthrough Effect in Walled Emitter Bipolar Transistors

Résumé

A detailed study of the punchthrough formation mechanism induced by the walled emitter configuration is proposed. Efficient process and device simulation tools -IMPACT- have been used and results have been successfully compared to measured characteristics.
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Dates et versions

hal-04248227 , version 1 (18-10-2023)

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Emmanuel Dubois. Analysis of the Punchthrough Effect in Walled Emitter Bipolar Transistors. ESSDERC '89: 19th European Solid State Device Research Conference, Sep 1989, Berlin (DE), Germany. ⟨10.1007/978-3-642-52314-4_166⟩. ⟨hal-04248227⟩
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