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Article Dans Une Revue Sensors and Actuators A: Physical Année : 1992

Piezoresistivity effects in N-MOSFET devices

Résumé

The piezoresistive coefficients in n-MOSFET devices have been experimentally determined. The π11,π12, and for the first time π44, two-dimensional (2D) piezoresistive coefficients in the n-type inversion layers have been analytically developed, including the quantum effects, the intravalley-intervalley scattering effects, the different saturation velocity effects and the hot-electron effects. The carrier charge variation due to the change of the band gap has also been taken into account. A mixed 2D/3D model for the piezoresistivity effects has been introduced in the process/device simulator IMPACT and good agreement between simulation and experiment has been achieved.

Dates et versions

hal-04246666 , version 1 (17-10-2023)

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Citer

Z.Z. Wanga, J. Suski, D. Collard, Emmanuel Dubois. Piezoresistivity effects in N-MOSFET devices. Sensors and Actuators A: Physical , 1992, 34 (1), pp.59-65. ⟨10.1016/0924-4247(92)80140-X⟩. ⟨hal-04246666⟩
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