Surface Reactivity of the Au‐Si‐Ho Quasicrystalline 1/1 Approximant
Résumé
The oxidation of the (100) surface of Au‐Si‐Ho quasicrystalline approximant was studied using low‐energy electron diffraction and X‐ray photoelectron spectroscopy. The combination of these two techniques provides evidence for a Ho and Si surface segregation induced by O 2 adsorption, resulting in the loss of surface long‐range order.
Domaines
Chimie-Physique [physics.chem-ph]
Origine : Fichiers produits par l'(les) auteur(s)