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Article Dans Une Revue Microelectronics Reliability Année : 2023

SiC power MOSFET overload detection, short-circuit protection and gate-oxide integrity monitoring using a switched resistors dual-channel gate-driver

Résumé

The main factor still hindering a wide industrial adoption of SiC power MOSFETs is essentially a global reduced ruggedness in comparison to their Si counterparts. The proposed gate driving architecture leverages faultinduced gate voltage disturbances and enhances them to facilitate their detection through two dedicated commutated gate resistors. This approach combines switching dynamics and enhanced ON-state faul t sensibility. This architecture, affording innovative short-circuits and overload detections, as well as gate-oxide integrity monitoring, was validated on a 600V short-circuit power test bench using commercial 1200V/36A SiC MOSFETs.
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Dates et versions

hal-04242250 , version 1 (14-10-2023)
hal-04242250 , version 2 (20-10-2023)

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M. Picot-Digoix, Frédéric Richardeau, W. Jouha, J.-M. Blaquière, S. Vinnac, et al.. SiC power MOSFET overload detection, short-circuit protection and gate-oxide integrity monitoring using a switched resistors dual-channel gate-driver. Microelectronics Reliability, inPress, pp.115082. ⟨10.1016/j.microrel.2023.115082⟩. ⟨hal-04242250v2⟩
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