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Article Dans Une Revue ChemPhysChem Année : 2023

Dissociation of N2 on a Si(111)-7x7 Surface at Room Temperature

Résumé

We demonstrate that the strong N2 bond can be efficiently dissociated at low pressure and ambient temperature on a Si(111)-7x7 surface. The reaction was experimentally investigated by scanning tunnelling microscopy and X-ray photoemission spectroscopy. Experimental and density functional theory results suggest that relatively low thermal energy collision of N2 with the surface can facilitate electron transfer from the Si(111)-7x7 surface to the π*-antibonding orbitals of N2 that significantly weaken the N2 bond. This activated N2 triple bond dissociation on the surface leads to the formation of a Si3N interface.
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Dates et versions

hal-04238212 , version 1 (12-10-2023)

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Elie Geagea, Ali Hamadeh, Judicaël Jeannoutot, Frank Palmino, Nicolas Breault, et al.. Dissociation of N2 on a Si(111)-7x7 Surface at Room Temperature. ChemPhysChem, 2023, 24 (15), pp.e202300182 (6). ⟨10.1002/cphc.202300182⟩. ⟨hal-04238212⟩
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