Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM [1st Prize Winner - Best Paper Awards ESREF'23] - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronics Reliability Année : 2023

Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM [1st Prize Winner - Best Paper Awards ESREF'23]

M. Shqair
Frédéric Richardeau

Résumé

For the first time, a complete 2D transient multiphysics electro-thermo-mechanical and metallurgical model of a 1.2kV-80mOhm gate-planar SiC MOSFET power chip has been developed in a single FEM software. This model is used to quantify the short-circuit critical time and energy density with respect to the local SiO2 interlayer strength at high temperatures and the Al source-metal solidus-liquidus phase transition temperature. Repetitive experimental short-circuits were conducted to confirm the gate-aging existence in coherence with the critical values extracted from the proposed model.
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hal-04236654 , version 1 (11-10-2023)

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M. Shqair, E. Sarraute, T. Cazimajou, Frédéric Richardeau. Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM [1st Prize Winner - Best Paper Awards ESREF'23]. Microelectronics Reliability, 2023, pp.115081. ⟨10.1016/j.microrel.2023.115081⟩. ⟨hal-04236654⟩
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