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Brevet Année : 2003

Method for making a wire nanostructure in a semiconductor film

Fraboulet D.
  • Fonction : Auteur
Gautier J.
  • Fonction : Auteur
Clement N.
  • Fonction : Auteur
Bouchiat V.
  • Fonction : Auteur

Résumé

This invention relates to a process for manufacturing nanowire structures, the process comprising the following steps: manufacture of a thin semiconductor film (1) extending between a first terminal (4) and a second terminal (5), and passage of a current between the first and the second terminals so as to form at least one continuous overthickness (R1, R2, R3) in the thin semiconductor film by migration of a fraction of the semiconductor material, under the action of the current, the continuous overthickness being formed along the direction of the current that passes through the film.
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Dates et versions

hal-04236567 , version 1 (11-10-2023)

Identifiants

  • HAL Id : hal-04236567 , version 1

Citer

D. Tonneau, Fraboulet D., Gautier J., Clement N., Bouchiat V.. Method for making a wire nanostructure in a semiconductor film. France, Patent n° : US7217946B2. 2003, https://patents.google.com/patent/US7217946B2/en. ⟨hal-04236567⟩
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