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Article Dans Une Revue Applied Physics Letters Année : 2005

Purification and crystallization of tungsten wires fabricated by focused-ion-beam-induced deposition

M. Prestigiacomo
  • Fonction : Auteur
F. Bedu
  • Fonction : Auteur
F. Jandard
  • Fonction : Auteur
H. Dallaporta
  • Fonction : Auteur
L. Roussel
  • Fonction : Auteur
P. Sudraud
  • Fonction : Auteur

Résumé

We studied the behavior of tungsten wires, fabricated by focused-ion-beam-induced deposition and subjected to high current density. We present a simple electrical treatment, which allows an improved wire resistivity of more than 80%. We have distinguished two steps in the treatment. When the current density reaches 1.4×107A∕cm2, Ga atoms segregate and form droplets on the wire. As the current density increases, new droplets appear and merge into a single droplet. At 5.8×107A∕cm2, the droplet evaporates, the resistance is lost and the wire crystallizes. The final resistivity is close to 55 μΩ cm. The same treatment applied to as-deposited platinum wires does not lead to the same observations: neither segregation nor crystallization was found.
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Dates et versions

hal-04236279 , version 1 (10-10-2023)

Identifiants

Citer

M. Prestigiacomo, F. Bedu, F. Jandard, D. Tonneau, H. Dallaporta, et al.. Purification and crystallization of tungsten wires fabricated by focused-ion-beam-induced deposition. Applied Physics Letters, 2005, 86 (19), ⟨10.1063/1.1927714⟩. ⟨hal-04236279⟩
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