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Article Dans Une Revue Japanese Journal of Applied Physics Année : 1992

Kinetics of Laser-Assisted Chemical Vapor Deposition of Tungsten Microstructures

Geoffroy Auvert
  • Fonction : Auteur
Yves Pauleau
  • Fonction : Auteur

Résumé

Tungsten microstructures (dots, strips and films) have been deposited via H 2 reduction of WF 6 on polycrystalline silicon-coated quartz substrates irradiated with a focused cw argon laser beam. The deposition rate of W dots, deduced from α-step measurements of the height of dots, was investigated as a function of irradiation time, composition of H 2 -WF 6 gas mixtures and laser-induced surface temperature. At a laser-induced surface temperature ranging from 340° to 670°C with an H 2 partial pressure varying from 50 to 700 Torr, the reaction order with respect to H 2 was equal to one-half, whereas at higher temperatures (750°-950°C) and lower H 2 partial pressures (20-80 Torr), the reaction order with respect to H 2 was found to be one. The reaction mechanism of the H 2 reduction of WF 6 on substrates irradiated with the argon laser beam is discussed.
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Dates et versions

hal-04236253 , version 1 (10-10-2023)

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Geoffroy Auvert, Yves Pauleau, Didier Tonneau. Kinetics of Laser-Assisted Chemical Vapor Deposition of Tungsten Microstructures. Japanese Journal of Applied Physics, 1992, 31 (1R), pp.100. ⟨10.1143/JJAP.31.100⟩. ⟨hal-04236253⟩
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