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Communication Dans Un Congrès Année : 2021

Electrical integration of silicon nitride drum resonators

Résumé

Silicon nitride (SiN) strings and membranes, fabricated on pre-stressed thin film emerged as promising devices. Because they have nanogram effective mass and easily achieve in MHz range resonance frequency with high quality factor. Unfortunately, the insulant feature greatly limits implementations of SiN mechanical resonator in an electrical system. Integration of the double-clampled beam structure has been successfully demonstrated in both capacitive coupling and dielectric coupling schemes [1]. However, the coupling effect is quite weak and its improvement requires a demanding nanofabrication technique. In this work, we introduce our recent progress in developing a new SiN drum resonator with capacitive coupling design, which was achieved with standard CMOS compatible fabrication process. We will also present their basic device properties at room temperature and integrations with a microwave optomechanical platform at 4K temperature.
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Dates et versions

hal-04235569 , version 1 (10-10-2023)

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  • HAL Id : hal-04235569 , version 1

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Srisaran Venkatachalam, Ronghua Zhou, Xin Zhou. Electrical integration of silicon nitride drum resonators. The third international workshop on the Frontiers of Nanomechanical Systems, Jan 2021, ICFO, on-line, Spain. ⟨hal-04235569⟩
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