InP DHBT on-wafer RF characterization and smallsignal modelling up to 220 GHz
Résumé
In this paper, we perform on-wafer characterization of an InP double heterojunction bipolar (InP DHBT) up to 220 GHz using conventional characterization and de-embedding methods. Transistor measurements are analyzed through a comparison with the small-signal model simulation. Transistor accesses are modeled in order to understand how parasitic parameters are distributed and to propose subsequent improvements.
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|---|
| Licence |