Communication Dans Un Congrès Année : 2023

InP DHBT on-wafer RF characterization and smallsignal modelling up to 220 GHz

Résumé

In this paper, we perform on-wafer characterization of an InP double heterojunction bipolar (InP DHBT) up to 220 GHz using conventional characterization and de-embedding methods. Transistor measurements are analyzed through a comparison with the small-signal model simulation. Transistor accesses are modeled in order to understand how parasitic parameters are distributed and to propose subsequent improvements.

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hal-04231512 , version 1 (06-10-2023)

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  • HAL Id : hal-04231512 , version 1

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Nil Davy, Marina Deng, Virginie Nodjiadjim, Mukherjee Chhandak, Muriel Riet, et al.. InP DHBT on-wafer RF characterization and smallsignal modelling up to 220 GHz. 26th European Microwave Week (EuMW), Sep 2023, Berlin, Germany. ⟨hal-04231512⟩
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