Study of the reactivity of a single crystal of silicon with molten copper(I) chloride
Résumé
When a single crystal of silicon is dipped into a molten bath of copper(I) chloride between 425 and 480 °C, relatively rapid formation of the intermetallic compound Cu3Si occurs. For reaction times less than 4 min the nuclei always present a geometrical pyramidal structure with a square [on Si(100)] or triangular [on Si(111)] basis. The nucleation growth kinetics on Si(100) are obtained by a method of nuclei counting and the overall reaction rate seems to be controlled by the nucleation rate of the Cu3Si phase. At longer reaction times, when the nuclei are overlapping each other, a continuous layer of Cu3Si forms on silicon with a thickness proportional to the square root of the reaction time. The layer growth mechanism is governed by the diffusion of copper at the Si-Cu3Si interface.
Domaines
Chimie
Origine : Fichiers produits par l'(les) auteur(s)