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Communication Dans Un Congrès Année : 2023

Improving off-state capacitance of SOI-CMOS RF switches: how good are air microcavities?

Résumé

This paper investigates the reduction of the off-state capacitance (COFF) of SOI-CMOS RF switches induced by the introduction of air microcavity in the back-end interconnection network. A detailed methodology combining electromagnetic and semiconductor transport simulations is used to separately evaluate the respective contributions of the interconnects and junction capacitances. A baseline switch and an optimized version of the same are studied to evaluate their ability to take advantage of air microcavities. Simulations show a reduction of 73 fF/mm regardless of the switch structure considered, resulting in a 24.6% and 30.6% improvement in COFF for baseline and optimized switches, respectively, bringing the optimized version to a 60fs record Ron × Coff. This concept was experimentally implemented using a partial etch process that resulted in a reduction of 21.7 fF/mm, i.e., 7.2%. Finally, the implementation of a more isotropic and selective etching process using HF in vapor phase is shown to approach the optimal configuration of air microcavities.
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Dates et versions

hal-04226645 , version 1 (03-10-2023)

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Daniel Gheysens, Alain Fleury, Stéphane Monfray, Frédéric Gianesello, Philippe Cathelin, et al.. Improving off-state capacitance of SOI-CMOS RF switches: how good are air microcavities?. IEEE 53rd European Solid-State Device Research Conference, ESSDERC, Sep 2023, Lisbon, Portugal. pp.109-112, ⟨10.1109/ESSDERC59256.2023.10268524⟩. ⟨hal-04226645⟩
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