Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue ACS Applied Nano Materials Année : 2023

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Yong Deng
Wenyu Hu
Fujun Xu
Wenbin Qiu
Bo Wu
Chaoyuan Jin
  • Fonction : Auteur
Thomas Walther

Résumé

The atomic-layer misorientation during the growth of a 5 μm thick AlN thin film on a patterned (0001) sapphire substrate was investigated by the scan rotation approach using a probe aberration-corrected scanning transmission electron microscope at a nanometer scale. Through the geometrical phase analysis of the resulting twisted atomic structure at different depths below the top surface, it is shown that over 10% of local tensile and compressive strain is balanced in a 1.6° twist of the c-planes within the first micron of AlN growth. As a consequence, the formation of threading dislocations is reduced. The in-plane twist is seen to decrease toward the layer surface down to 0.5°. Finally, growth has adopted the conventional step flow mechanism with a reduced density of emerging dislocations by the thickness of 5 μm. Our finding forecasts the possibility of understanding the relationship between atomic bilayer twist and local strain accommodation at a nanometer scale, which could provide guidance for achieving better crystal quality of AlN thin films on patterned substrates during epitaxy.
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Yong Deng, Nan Xie, Wenyu Hu, Zhenyu Ma, Fujun Xu, et al.. Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices. ACS Applied Nano Materials, 2023, 6 (6), pp.4262-4270. ⟨10.1021/acsanm.2c05372⟩. ⟨hal-04217313⟩
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