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Article Dans Une Revue Physical Chemistry Chemical Physics Année : 2022

Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation

José Cardoso
Diogo Carvalho
Maria Correia
Sérgio Magalhães
Djibril Nd. Faye
Adam Bross
  • Fonction : Auteur
Christian Wetzel
Eduardo Alves

Résumé

350 nm and 550 nm thick InGaN/GaN bilayers were irradiated with different energies (from ∼82 to ∼38 MeV) of xenon ( 129 Xe) ions and different fluences of 1.2 GeV lead ( 208 Pb) ions, respectively.
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Dates et versions

hal-04210157 , version 1 (18-09-2023)

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Citer

Przemysław Jóźwik, José Cardoso, Diogo Carvalho, Maria Correia, Miguel Sequeira, et al.. Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation. Physical Chemistry Chemical Physics, 2022, 24 (42), pp.25773-25787. ⟨10.1039/D2CP02526D⟩. ⟨hal-04210157⟩
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