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Communication Dans Un Congrès Année : 2023

Industrial Si Power MOSFET’s Static characterization at cryogenic temperature

Résumé

To reduce the fuel consumption and CO2 emissions, aircraft industry has been investigating superconducting applications. These systems require on-board cryogenic system to operate and the question of full cryogenic electrical chain, namely turbine - generator - power electronics - cable - power electronics - motor - fan, naturally arose to reduce the losses. Switches are the core of power electronics converter, which means that reducing their losses is a key point for the whole converter and the full cryogenic electrical chain. But cryogenic temperatures may alter their behavior due to material contractions and changes in charge carrier behavior. It is therefore important to determine which temperature is optimal for the switches, or at least the range in which a compromise between less losses and good switch behavior is observed. There are two major switches used in the industry, the MOSFET and the IGBT. We first decided to choose a Si-MOSFET, the choice of a single material allows to better understand what happens at cryogenic temperature. The main losses of the MOSFET come from the Drain–Source resistance RDSON. In addition, to ensure the switch operating, the evolution of the voltage threshold VTH as a function of temperature must be determined. This paper presents new results on the study of the Drain–Source resistance RDSON and the voltage threshold VTH of an industrial Si Power MOSFET from 300 K down to 10 K.
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Dates et versions

hal-04208871 , version 1 (15-09-2023)

Identifiants

  • HAL Id : hal-04208871 , version 1

Citer

Yanis Laïb, Kévin Berger, Stéphane Raël, Christophe Viguier, Jean Lévêque, et al.. Industrial Si Power MOSFET’s Static characterization at cryogenic temperature. EUCAS 2023 - 16th European Conference on Applied Superconductivity, Sep 2023, Bologna, Italy. p. 240, 3-LO-IS-05S. ⟨hal-04208871⟩
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